MOSFETs | FDG6318PZ

Dual P-Channel, Digital FET -20 V, -0.5 A, 780 mΩ

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Overview

These dual P-Channel logic level enhancement mode MOSFET are produced using an especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital transistors and small signal MOSFETS

  • This product is general usage and suitable for many different applications.
  • -0.5A, -20V
  • RDS(ON) = 780 mΩ @ VGS = -4.5V
  • RDS(ON) = 1200 mΩ @ VGS = -2.5V
  • Very low level gate drive requirements allowing directoperation in 3V circuits (VGS(TH) < 1.5V).
  • Gate-Source Zener for ESD ruggedness (>1.4kV HumanBody Model).
  • Compact industry standard SC-70-6 surface mountpackage.

Material Composition

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDG6318PZ

Last Shipments

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

N

P-Channel

Dual

-20

12

-1.5

-0.5

0.3

Q1=Q2=1200

Q1=Q2=780

-

-

0.67

85.4

Price N/A

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