Silicon Carbide (SiC)

A full ecosystem of parts to support wide bandgap power designs, including SiC diodes, SiC MOSFETs, and SiC Modules.

By Technology

Silicon Carbide (SiC) Diodes
These products use a completely new technology that provides superior switching performance and higher reliability to silicon.
Silicon Carbide (SiC) MOSFETs
These products are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost.

By Module

Silicon Carbide (SiC) Modules

These products contain SiC MOSFETs and SiC diodes. The boost modules are used in the DC-DC stages of solar inverters. These modules use SiC MOSFETs and SiC diodes with voltage ratings of 1200 V.

Silicon Carbide (SiC) Technology Benefits

SiC devices have a 10x higher dielectric breakdown field strength, 2x higher electron saturation velocity, 3x higher energy band gap, and 3x higher thermal conductivity compared to Silicon devices.

High Reliability

onsemi SiC devices have a patented termination structure which provides superior robustness for harsh environmental conditions.

H3TRB Testing (High Temp/Humidity/Bias), 85C/85% RH/85% V (960V)


Robustness

onsemi Schottky Barrier SiC Diodes always maintain the best in class behavior in regards to leakage.


Ruggedness

SiC Diodes Ruggedness – Surge and Avalanche

Surge current waveform of a 650V/30A onsemi SiC diode
Avalanche current waveform of a 650V/30A onsemi SiC diode

Wide Bandgap Applications