MOSFETs | FDMS8558S

N-Channel PowerTrench® SyncFET™ MOSFET, 25V, 90A, 1.5mΩ

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Overview

This N-Channel SyncFET™ is produced using an advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.

  • Server
  • Dual Cool™ PQFN package
  • Max rDS(on) = 1.5 mΩ at VGS = 10 V, ID = 33 A
  • Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 31 A
  • High performance technology for extremely low rDS(on)
  • SyncFET™ Schottky Body Diode
  • RoHS Compliant

Material Composition

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMS8558S

Obsolete

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

N

N-Channel

Single

25

12

2.2

90

78

-

1.7

1.5

32

38

5118

Price N/A

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