FFSD1065A: SiC Diode - 650V, 10A, DPAK
|
|
»View Reliability Data
»View Material Composition » Product Change Notification |
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew
| Features | |
|---|---|
|
|
|
|
|
|
|
| Applications |
|---|
|
Technical Documentation & Design Resources
| Simulation Models (3) | Package Drawings (1) |
| Data Sheets (1) |
|
Availability & Samples
|
Specifications
|
|
|
|
|
|
|
|
|
|||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Case Outline |
|
|
|
|
|||||||||||||
| FFSD1065A | Active |
|
FFSD1065A | DPAK-3 / TO-252-3 | 369AS | 1 | 260 | Tape and Reel | 2500 | $2.0577
|
||||||||
| Market Leadtime (weeks) | : | Contact Factory |
Product
Description
Pricing ($/Unit)
Compliance
Status
Device Grade
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
Case Outlines
369AS
| Support |