N-Channel PowerTrench® MOSFET 100V, 5.6A, 160mΩ

Overview

This N-Channel MOSFET is produced using an advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

  • LED TV
  • Consumer Appliances
  • Synchronous Rectification
  • Uninterruptible Power Supplies
  • Micro Solar Inverters

  • RDS(on) = 121 mΩ ( Typ.)@ VGS = 10 V, ID = 2.8 A
  • RDS(on) = 156 mΩ ( Typ.)@ VGS = 5 V, ID = 1.8 A
  • Fast Switching Speed
  • Low Gate Charge ( Typ.2.9nC)
  • High Performance Trench Technology for Extremely Low RDS(on)
  • High Power and Current Handling Capability
  • RoHS Compliant

Tools and Resources

Product services, tools and other useful resources related to FDT1600N10ALZ

Buy/Parametrics Table

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDT1600N10ALZ

Loading...

Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

1

260

REEL

4000

Y

N-Channel

PowerTrench® T1

SC-4

Small Signal

Standard

0

Single

0

100

160

±20

2.8

5.6

10.42

-

-

-

2.9

169

0.64

32.7

43

2.04

$0.2307

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.