Leading the Charge

onsemi Powering the Next Leap Forward in AI and Electrification

A Breakthrough for AI and Electrification

onsemi’s vertical Gallium Nitride (vGaN) technology is a breakthrough power semiconductor technology that delivers record efficiency, power density, and ruggedness for the age of AI and electrification.

Developed and manufactured at the onsemi’s fab in Syracuse, NY, this next-generation “GaN-on-GaN” design moves current vertically through the chip instead of along the surface to enable far greater performance in a smaller, double-sided cooled package.

Featured Resources

Discover our most valuable vGaN resources handpicked to help you design smarter, faster, and with greater confidence.

What is vGaN?

The novel next-generation GaN-on-GaN power semiconductors conduct current vertically, delivering record power density and efficiency, making it ideal for AI data centers, electric vehicles (EVs), renewable energy, and aerospace, defense and security.

onsemi vGaN Features

Higher Power Density

Up to 1,200 Volts and Beyond.

Efficiency Gains

Reduced energy loss and heat, increasing efficiency by up to 50%.

Compact Designs

Reduced end-system size and weight.

State-of-the-art Manufacturing

66,000 square-foot facility in Syracuse, NY. Proprietary processes grow GaN layers directly on GaN substrates.

Packaging Innovation

Double-sided cooled package.

Future-Proof

vGaN enables switching frequencies much higher than traditional solutions.

Key Technology Applications

Vertical GaN

AI Data Center

Increased power density for 800V DC-DC converters and reduced component counts to greatly improve cost per rack.

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Vertical GaN

Electric Vehicles

Smaller, lighter and more efficient inverters for increased EV range.

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Vertical GaN

Renewable Energy

Higher voltage handling and reduced energy losses for solar inverters. Fast, efficient, high-density power for energy storage systems.

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Vertical GaN

Aerospace, Defense, and Security

Higher performance, enhanced ruggedness, and more compact designs.

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