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NGTG40N120FL2: IGBT, 1200V 40A SOLAR/UPS

Datasheet: IGBT - Field Stop II
Rev. 0 (178kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications.
Features
 
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Optimized for High Speed Switching
  • 10 s Short Circuit Capability
  • These are Pb−Free Devices
Applications
  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NGTG40N120FL2WG Active
Pb-free
Halide free
NGTG40N120FL2 TO-247-3 340AL NA Tube 30 $4.3999
Market Leadtime (weeks) : 8 to 12

Product
Description
Pricing ($/Unit)
Compliance
Status
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Package Type
NGTG40N120FL2WG  
 $4.3999 
Pb
H
 Active   
1200
40
2
-
1.1
3.4
-
-
313
10
-
535
No
TO-247-3
Case Outlines
340AL   
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