Gallium Nitride (GaN) FETs

GaNEXUSTM Gallium Nitride (GaN) FETs are enhancement‑mode discrete GaN HEMTs that leverage wide‑bandgap material properties to deliver fast switching, low gate and output charge, and superior efficiency compared to silicon power transistors. These characteristics enable higher operating frequencies, reduced magnetics, and increased power density across low/medium, high and ultra-high voltage power conversion applications.

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Low/Medium Voltage GaN FETs

GaNEXUSTM Enhancement-mode discrete lateral GaN HEMTs 40V – 200V, optimized for high-efficiency, mid-voltage power conversion and compact system designs.
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High Voltage GaN FETs

GaNEXUSTM Enhancement mode discrete lateral GaN HEMTs 650V – 1200V, optimized for high-efficiency, high-voltage power conversion and compact system designs.
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