MOSFETs | FDS8928A

Dual N & P-Channel Enhancement Mode Field Effect Transistor

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Overview

These dual N- and P -Channel enhancement mode power field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

  • This product is general usage and suitable for many different applications.
  • N-Channel
    5.5A, 30V
    Max. RDS(on) = 30 mΩ at VGS = 4.5 V,
    Max. RDS(on) = 38 mΩ at VGS = 2.5 V
  • P-Channel
    -4A, -20V
    Max. RDS(on) = 55 mΩ at VGS = -4.5 V
    Max. RDS(on) = 72 mΩ at VGS = -2.5 V
  • High density cell design for extremely low RDS(ON)
  • High power and current handling capability in a widely used surface mount package
  • Dual (N & P-Channel) MOSFET in surface mount package

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CAD Models

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Case Outline

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MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDS8928A

Last Shipments

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

Complementary

Dual

+30/-20

-8

±1

N: 5.5, P: -4.0

2

N: 38.0 , P: 72.0

N:30,P:55

-

-

20

1130

Price N/A

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