P-Channel PowerTrench® MOSFET, 30V, -13A, 9mΩ

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Overview

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

  • This product is general usage and suitable for many different applications.
  • -13 A, -30 V.
  • RDS(ON) = 9 m Ω @ VGS = -10 V
  • RDS(ON) = 13 m Ω @ VGS = -4.5 V
  • Extended VGSS range (±25V) for battery applications
  • High performance trench technology for extremelylow RDS(ON)
  • High power and current handling capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS6679

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

-30

9

P-Channel

Single

25

-3

-13

2.5

-

13

16

71

3939

Price N/A

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