MOSFETs | FDMB3800N

Dual N-Channel PowerTrench® MOSFET 30V, 4.8A, 40mΩ

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Overview

These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 40mΩ at VGS = 10V, ID = 4.8A
  • Max rDS(on) = 51mΩ at VGS = 4.5V, ID = 4.3A
  • Fast switching speed
  • Low gate Charge
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability.
  • RoHS Compliant

Material Composition

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMB3800N

Active

Pb

A

H

P

WDFN-8

511CW

1

260

REEL

3000

Y

N-Channel

Dual

30

20

3

4.8

1.6

-

Q1=Q2=51

Q1=Q2=40

-

4

350

$0.4413

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