FDG6306P

P-Channel 2.5V Specified PowerTrench^® MOSFET -20 V, -0.6 A, 420 mΩ

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Overview

This P-Channel 2.5V specified MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Applications

This product is general usage and suitable for many different applications.

Features

–0.6 A, –20 V.
R_DS(ON)= 420 mΩ @ VGS = –4.5 V
R_DS(ON) = 630 mΩ @ VGS = –2.5 V
Low gate charge
High performance trench technology for extremelylow R_DS(ON)
Compact industry standard SC70-6 surface mountpackage

Material Composition

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Package Type

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MSL Type

MSL Temp (°C)

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDG6306P

Active

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

260

REEL

3000

P-Channel

Dual

-20

-1.5

-0.6

0.3

Q1=Q2=630

Q1=Q2=420

1.7

1.4

114

$0.1731

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDG6306P

P-Channel 2.5V Specified PowerTrench® MOSFET -20 V, -0.6 A, 420 mΩ

Overview

Availability & Samples (size)

Email Sales

P-Channel 2.5V Specified PowerTrench^® MOSFET -20 V, -0.6 A, 420 mΩ