MOSFETs | BSS123W

N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 0.17A, 6Ω

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Overview

This N-channel enhancement mode MOSFET is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level transistor, high speed line drivers, power management/power supply and switching applications.

  • Small Servo Motor Control
  • Power MOSFET Gate Drivers
  • Logic Level Transistors
  • High Speed Line Drivers
  • Power Management
  • Power Supply and Switching
  • 0.17 A, 100 V
     RDS(ON) = 6 Ω at VGS = 10 V
     RDS(ON) = 10 Ω at VGS = 4.5 V
  • High Density Cell Design for Low RDS(ON)
  • Rugged and Reliable
  • Ultra Small Surface Mount Package
  • Very Low Capacitance
  • Fast Switching Speed
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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BSS123W

Last Shipments

Pb

A

H

P

SC-70-3 / SOT-323-3

419AB

1

260

REEL

3000

N

N-Channel

Single

100

±20

2

0.17

0.2

-

10000

6000

-

1.1

71

Price N/A

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