BSS123W: N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 0.17A, 6Ω

Datasheet: BSS123W - N-Channel Logic Level Enhancement Mode Field Effect Transistor
Rev. A (410kB)
Product Overview
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This N-channel enhancement mode MOSFET is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level transistor, high speed line drivers, power management/power supply and switching applications.
Features
 
  • 0.17 A, 100 V
     RDS(ON) = 6 Ω at VGS = 10 V
     RDS(ON) = 10 Ω at VGS = 4.5 V
  • High Density Cell Design for Low RDS(ON)
  • Rugged and Reliable
  • Ultra Small Surface Mount Package
  • Very Low Capacitance
  • Fast Switching Speed
  • RoHS Compliant
Applications
  • Small Servo Motor Control
  • Power MOSFET Gate Drivers
  • Logic Level Transistors
  • High Speed Line Drivers
  • Power Management
  • Power Supply and Switching
Technical Documentation & Design Resources
Application Notes (12) Package Drawings (1)
Data Sheets (1)  
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BSS123W Last Shipments
Pb-free
Halide free
BSS123W SC-70-3 / SOT-323-3 419AB 1 260 Tape and Reel 3000  
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19) : >1K
Case Outlines
419AB   
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