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NVBG020N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 20 mΩ, D2PAK−7L

Datasheet: MOSFET — Power, Silicon Carbide, Single N-Channel, D2PAK7L, 1200 V, 98 A, 20 mΩ
Rev. 2 (259kB)
Product Overview
»View Material Composition
» Product Change Notification
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • Qualified for Automotive According to AEC−Q101
 
  • Automotive Grade
  • 1200V rated
   
  • Max RDS(on) = 28 mΩ at Vgs = 20V, Id = 60A
   
  • High Speed Switching and Low Capacitance
   
  • 100% UIL Tested
   
  • Devices are RoHS Compliant
   
Applications   End Products
  • High power DCDC
  • Inverter
 
  • Automotive DC/DC converter for EV/PHEV
  • Automotive Inverters
Technical Documentation & Design Resources
White Papers (1) Data Sheets (1)
Simulation Models (3) Videos (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NVBG020N120SC1 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVBG020N120SC1 D2PAK7 (TO-263-7L HV) 1 245 Tape and Reel 800 $16.3329
Market Leadtime (weeks) : 8 to 12
Avnet   (2020-08-19 00:00) : <1K
ON Semiconductor   (2020-09-02 00:00) : 1,600

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NVBG020N120SC1  
 $16.3329 
Pb
A
H
P
 Active   
N-Channel
Single
1200
98
20
220
258
175
D2PAK7 (TO-263-7L HV)
Case Outlines
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