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FFSD0465A: SiC Diode - 650V, 4A, DPAK

Datasheet: Silicon Carbide Schottky Diode 650 V, 4 A
Rev. 4 (162kB)
Product Overview
»View Material Composition
» Product Change Notification
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew
Features
 
  • Max Junction Temperature 175 °C
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery
Applications
  • PFC
  • Industrial Power
  • Solar
  • EV Charger
  • UPS
  • Welding
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FFSD0465A Active
Pb-free
Halide free
FFSD0465A DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 $1.0
Market Leadtime (weeks) : 8 to 12

Product
Description
Pricing ($/Unit)
Compliance
Status
Device Grade
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
FFSD0465A  
 $1.0 
Pb
H
 Active   
Commercial
Single
650
4
1.75
DPAK-3 / TO-252-3
Case Outlines
369AS   
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