Integrated Passive Devices

The High-Q™ Integrated Passive Device (IPD) process technology from ON Semiconductor offers a copper on high resistivity silicon platform ideal for the production of passive devices such as baluns, filters, couplers, and diplexers that are used in portable, wireless and RF applications. IPD provides a cost effective solution for RF system in package. A foundry shuttle service is available for engineering prototypes. IPD technology supports fabrication of copper inductors, precision capacitors, and precision resistors in a world-class 200 mm wafer manufacturing facility. Design services are offered for custom applications. A full feature design kit is available to customers for layout, simulation, and verification.


Features

  • High-Q™ copper inductor
  • MIM capacitor
  • TiN metal resistor
  • Three metal routing layers (1 Al, 2 Cu)
  • 200 mm silicon wafer diameter
  • High resistivity silicon substrate
  • Planar dual damascene copper process
  • Superior process control
  • Full feature design kit
  • Design services
  • Foundry shuttle service
  • Smaller area than discrete solutions
  • Thinner than LTCC
  • Lower cost than GaAs
  • Better performance than other silicon solutions
Si HRS Substrate 1.5 kΩ∙cm
MIM Capacitance density 0.62 fF/µm²
Resistor Sheet Resistance 9 Ω/square
Inductor Sheet Resistance 3.5 mΩ/square
Base Si Oxide Thickness 5.6 µm
MIM Operating Voltage 20 V
M1 Al Metal Thickness 2 µm
MN Cu Metal Thickness 5 µm
MN2 Cu Metal Thickness 5 µm
Bond Pad Wirebond, Flip-Chip
Family Core Voltage
Si HRS Substrate 1.5 kΩ∙cm
MIM Capacitance density 0.62 fF/µm²
Resistor Sheet Resistance 9 Ω/square
Inductor Sheet Resistance 3.5 mΩ/square
Base Si Oxide Thickness 5.6 µm
MIM Operating Voltage 20 V
M1 Al Metal Thickness 2 µm
MN Cu Metal Thickness 5 µm
MN2 Cu Metal Thickness 5 µm
Bond Pad Wirebond, Flip-Chip

Custom CCD Image Sensor Capabilities

(All Values Typical at 25°C)


Inductors

Parameter Typical Value Unit
Copper Thickness 5, 10 µm
Min Width 5 µm
Max Width 40 µm
Min Space 3 µm
Min Inner Diameter 50 µm
Recommended Range 1-50 nH
Peak Q 25-45 nH

Capacitors

Parameter Typical Value Unit
Min Width 15.75 µm
Max Width 450 µm
Max Area 45000 µm²
Recommended Range 1-100 pF

Resistors

Parameter Typical Value Unit
Min Width 2 µm
Min Length 9 µm

Software

Schematic Capture
Cadence Virtuoso
Agilent ADS
Place and Route
Cadence Virtuoso
Agilent ADS

Simulation
Ansoft HFSS
Agilent ADS

Physical Verification
Cadence Assura
Mentor Calibre

CAD Tool Compatibility

Technology Software Availability
IPD1/IPD2 PDKs (Pcells & Models): Cadence Virtuoso OA, Keysight ADS, NI AWR Environment V13
Templates: ANSYS HFSS, Integrand EMX, Sonnet
IPD0 Excel Calculator Tool