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C5: 0.5 µm Process Technology

Optimized for 5 V mixed-signal applications, the C5 process family from ON Semiconductor offers a medium-density, high-performance mixed-signal technology capable of integrating complex analog functions, digital content and 20 V capability. This process delivers the advantages of a dedicated mixed-signal 0.5 µm process without the costs associated with the extra mask steps of a BCD process. Low-voltage transistors are also available for the 0.5 µm process making it well-suited for low-power applications.


Features

  • 2 or 3 metal layers
  • Poly to poly capacitors
  • EEPROM
  • Schottky diodes
  • High voltage I/O – 12/20 V
  • High-resistance poly
  • Low-voltage modules

Process Characteristics
Parameter Value
Operating Voltage 5, 12 V
Substrate Material P-Type, Bulk or EPI
Drawn Transistor Length 0.6 µm
Gate Oxide Thickness 13.5 nm
Contact/Via Size 0.5 µm
Contacted Gate Pitch 3.9 µm
Top Metal Thickness 675 nm

Process Characteristics - Contacted Metal Pitch
Parameter Value
Metal 1.5 µm
Metal 2,3 1.6 µm
Metal Composition TiN/AlCu/TiN

Sample Process Options
Parameter Mask Layers*
Standard CMOS with 20 V extended drain 13/15
Plus double poly cap 14/16
All of the above plus 1,000 Ω/square resistor 15/17
All of the above plus 12 V gate 16/18
All of the above plus low Vt devices 19/21
* 2 Metal/3 Metal.

Device Characteristics

(All Values Typical at 25°C)

High-Voltage Transistors
12 V Dual Gate Nested Drain
N-Ch 12 V (NU) Typical Value Unit P-Ch 12 V (PU) Typical Value Unit
Vt 0.95 V Vt -1.6 V
Idsat 450 µA/µm Idsat -110 µA/µm
BVDSS 19 V BVDSS -14.5 V
20 V Extended Drain, 15 V Gate
N-Ch 20 V (NX) Typical Value Unit P-Ch 20 V (PU) Typical Value Unit
Vt 0.95 V Vt -1.65 V
Idsat 400 µA/µm Idsat -130 µA/µm
BVDSS 28 V BVDSS -28 V
20 V Extended Drain, 5 V Gate
N-Ch 20 V (NT) Typical Value Unit P-Ch 12 V (PT) Typical Value Unit
Vt 0.75 V Vt -1.0 V
Idsat 145 µA/µm Idsat -55 µA/µm
BVDSS 28 V BVDSS -28 V

Standard Transistors
N-Channel Typical Value Unit P-Channel Typical Value Unit
Vt 0.7 V Vt -0.9 V
Idsat 450 µA/µm Idsat -260 µA/µm

Resistors
Parameter Typical Value Unit
Poly 25 Ω/square
Hi-R Poly 1000 Ω/square
N-Diffusion 80 Ω/square
P-Diffusion 110 Ω/square
N-Well 855 Ω/square

Capacitors
Poly-Poly Typical Value Unit
Area 0.9 fF/µm²
Periphery 0.065 fF/µm

Libraries

(All values typical at 3.3 V, 25°C)

Front-End Digital Design - Digital Front-End Digital Design - Analog - General Design Information (GDI)
Synthesis Libraries Design Rules
Simulation Libraries Spice Models
Digital Design - High Performance Core Digital Design - Tall Pads for high I/O count designs
4.2 K gates/mm² * 86 µm in-line pad pitch
1.58 µW/MHz/gate 60 µm staggered pad pitch
103 ps gate delay (2 Input NAND, fanout = 2) 558 µm pad height
Mixed-Signal Design - Mixed-Signal Core
Separate substrate bus for reduced digital noise
7.4 K gates/mm² *
0.63 µW/MHz/gate
558 µm pad height
128 ps gate delay (2 Input NAND, fanout = 2)
* Routed gate density.
Mixed Signal Short Pads for high logic contact designs Mixed-Signal Medium Height Pads
135 µm in-line pad pitch 86 µm in-line pad pitch
388 µm pad height 567 µm pad height

Memory Options

SRAM
Single Port Synchronous* Dual Port Synchronous*
191 µm²/bit (64 k bit memory) 567 µm²/bit (64 k bit memory)
* Compiled

ROM
Asynchronous*
14.65 µm²/bit (64 k bit memory)
* Compiled

EEPROM
NASTEE (No Additional Steps EEPROM)
Vector (1x4 up to 1x32)
Array (2x4 up to 32x32)
* Compiled

CAD Tool Compatibility

Digital Design
Synopsys Design Compiler
Cadence Verilog
Analog Design
Cadence DFII (4.4.6)
Spectre
Place and Route
Synopsys Apollo, Astro
Cadence Silicon Ensemble
Physical Verification
Mentor Calibre

For more information please contact your local sales support.

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