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NIS5112: 12 V Electronic Fuse, eFuse

Datasheet: Electronic Fuse
Rev. 10 (442kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
The NIS5112 is an integrated switch utilizing a high side N-channel FET driven by an internal charge pump. This switch features a MOSFET which allows for current sensing using inexpensive chip resistors intead of expensive, low impedance current shunts.
It is designed to operate in 12 V systems and includes a robust thermal protection circuit.
Features
 
  • Integrated Power Device
  • Power Device Thermally Protected
  • No External Current Shunt Required
  • Enable/Timer Pin
  • Adjustable Slew Rate for Output Voltage
  • 9 V to 18 V Input Range
  • 30 mΩ Typical
  • Internal Charge Pump
Applications
  • Hard Drives
Availability & Samples
Specifications
Case Outlines
Intaractive Block Diagram
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NIS5112D1R2G Active
Pb-free
Halide free
NIS5112 SOIC-8 751-07 3 260 Tape and Reel 2500 $1.32
NIS5112D2R2G Active
Pb-free
Halide free
NIS5112 SOIC-8 751-07 3 260 Tape and Reel 2500 $1.32
Market Leadtime (weeks) : Contact Factory
PandS   (2020-09-14 00:00) : >1K
Market Leadtime (weeks) : Contact Factory
PandS   (2020-09-14 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Type
VI Max (V)
rDS(on) Max (mΩ)
TSD Typ (°C)
Thyst Typ (°C)
Package Type
NIS5112D1R2G  
 $1.32 
Pb
H
 Active   
Latch Off
18
35
135
40
SOIC-8
NIS5112D2R2G  
 $1.32 
Pb
H
 Active   
Auto-Retry
18
35
135
40
SOIC-8
Case Outlines
751-07   
Packages
NIS5112: 12 V Electronic Fuse, eFuse
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Featured Video
Mother Board Power Management (eFuse) Solutions with the NIS5232-35GEVB Evaluation Board
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