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FDN338P: P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -1.6A, 115mΩ

Datasheet: P-Channel Logic-Level Enhancement Mode Field Effect Transistor
Rev. A (442kB)
Product Overview
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»View Material Composition
» Product Change Notification
This P-Channel 2.5V specified MOSFET uses an advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
 
  • –1.6 A, –20 V
  • RDS(ON)= 115 mΩ @ VGS = –4.5 V
  • RDS(ON) = 155 mΩ @ VGS = –2.5 V
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT™ -3 provides low RDS(ON) and 30% higherpower handling capability than SOT23 in the samefootprint
Applications
  • This product is general usage and suitable for many different applications.
  • Battery Management
  • Load Switch
  • Battery Protection
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDN338P Active
Pb-free
Halide free
FDN338P SOT-23-3 527AG 1 260 Tape and Reel 3000 $0.1087
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19) : >10K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDN338P  
 $0.1087 
Pb
H
 Active   
P-Channel
Single
-20
8
-1.5
-1.6
0.5
155
115
-
7.2
4.4
451
SOT-23-3
Case Outlines
527AG   
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