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FDMC8622: N-Channel Shielded Gate Power Trench® MOSFET 100V, 16A, 56mΩ

Datasheet: FDMC8622-D.pdf
Rev. A (465kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This N-Channel MOSFET is produced using an advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Features
 
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 56 mΩat VGS = 10 V, ID = 4 A
  • Max rDS(on) = 100 mΩat VGS = 6 V, ID = 3 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • 100% UIL Tested
  • Termination is Lead-free and RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
Evaluation/Development Tool Information
Product Status Compliance Short Description Action
NCP1095GEVB Active
Pb-free
PoE-PD Interface Controller Evaluation Board, IEEE 802.3bt
FutureElectronics (2020-08-19) : 1
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDMC8622 Active
Pb-free
Halide free
FDMC8622 WDFN-8 511DQ 1 260 Tape and Reel 3000 $0.5333
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMC8622  
 $0.5333 
Pb
H
 Active   
N-Channel
Single
100
±20
4
16
31
-
-
56
-
3
3
302
WDFN-8
Case Outlines
511DQ   
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