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FCH165N65S3R0: Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-247

Datasheet: MOSFET — Power, N-Channel, SUPERFET III, Easy Drive, 650 V, 19 A, 165 mΩ
Rev. 0 (268kB)
Product Overview
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SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Features   Benefits
     
  • 700 V @ TJ = 150 °C
 
  • Higher system reliability at low temperature operation
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)
 
  • Low switching loss
  • Ultra Low Gate Charge (Typ. Qg = 39 nC)
 
  • Low switching loss
  • Optimized Capacitance
 
  • Lower peak Vds and lower Vgs oscillation
  • 100% Avalanche Tested
   
  • RoHS Compliant
   
  • Typ. RDS(on) = 140 mΩ
   
  • Internal Gate Resistance: 0.5 Ω
   
Applications   End Products
  • Telecommunication
  • Cloud system
  • Industrial
 
  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FCH165N65S3R0-F155 Active
Pb-free
FCH165N65S3R0 TO-247-3 340CH NA Tube 450 $1.4837
Market Leadtime (weeks) : Contact Factory
Case Outlines
340CH   
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