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BUZ11: N-Channel Power MOSFET 50V, 30A, 40mΩ

Datasheet: N-Channel Power MOSFET 50V, 30A, 40 m-Ohm
Rev. 3 (218kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This is an N-Channel enhancement mode silicon gate power MOSFET designed for applications such asswitching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switchingtransistors requiring high speed and low gate drive power.This type can be operated directly from integrated circuits.Formerly developmental type TA9771.
Features
 
  • 30A, 50V
  • RDS(ON)= 0.040Ω
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Majority Carrier Device
  • Related Literature- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Applications
  • TBA
Technical Documentation & Design Resources
Application Notes (12) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
BUZ11-NR4941 Active
Pb-free
BUZ11 TO-220-3 340AT NA Tube 800 $0.5575
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
BUZ11-NR4941  
 $0.5575 
Pb
 Active   
N-Channel
50
±20
2
30
75
-
-
40
-
7
1500
TO-220-3
Case Outlines
340AT   
Previously Viewed Products
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