BUZ11: N-Channel Power MOSFET 50V, 30A, 40mΩ
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This is an N-Channel enhancement mode silicon gate power MOSFET designed for applications such asswitching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switchingtransistors requiring high speed and low gate drive power.This type can be operated directly from integrated circuits.Formerly developmental type TA9771.
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Technical Documentation & Design Resources
| Application Notes (12) | Package Drawings (1) |
| Data Sheets (1) |
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Availability & Samples
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Specifications
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Case Outline |
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| BUZ11-NR4941 | Active |
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BUZ11 | TO-220-3 | 340AT | NA | Tube | 800 | $0.5575
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| Market Leadtime (weeks) | : | Contact Factory |
Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
Case Outlines
340AT
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