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NGTB50N120FL2: IGBT, 1200V 50A FS2 Solar/UPS

Datasheet: IGBT - Field Stop II
Rev. 5 (106kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features
 
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 10µs Short Circuit Capability
Applications
  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NGTB50N120FL2WG Active
Pb-free
Halide free
NGTB50N120FL2 TO-247-3 340AL NA Tube 30 $5.2265
Market Leadtime (weeks) : 17 to 20
Avnet   (2020-08-19 00:00) : <100

Product
Description
Pricing ($/Unit)
Compliance
Status
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Package Type
NGTB50N120FL2WG  
 $5.2265 
Pb
H
 Active   
1200
50
2.2
2
1.4
4.4
256
19
311
10
-
535
Yes
TO-247-3
Case Outlines
340AL   
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