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NGTB40N65IHRT: IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A

Datasheet: IGBT with Monolithic Reverse Conducting Diode
Rev. 1 (157kB)
Product Overview
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» Product Change Notification
This Insulated Gate Bipolar Transistor (IGBT) features robust and cost effective Field Stop (FS2) trench construction with a monolithic RC Diode. It provides a cost effective Solution for applications where diode losses are minimal. The IGBT is optimized for low conduction losses (low VCEsat) and is well suited for resonant or soft switching applications.
Features
 
  • Extremely Efficient Trench with Fieldstop Technology
  • Low Conduction Loss Design for Soft Switching Application
  • Reduced Power Dissipation in Inducting Heating Application
  • Reliable and Cost Effective Single Die Solution
  • This is a Pb−Free Device
Applications   End Products
  • Inductive Heating
  • Air Conditioning PFC
  • Welding
 
  • Industrial
Technical Documentation & Design Resources
Data Sheets (1) Package Drawings (1)
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
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Type
Qty.
NGTB40N65IHRTG Last Shipments
Pb-free
NGTB40N65IHRT, 650 V Monolithic reverse conducting IGBT TO-3P-3 340AB NA Tube 30  
Market Leadtime (weeks) : Contact Factory
Case Outlines
340AB   
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