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FGL60N100BNTD: 1000V, 60A, NPT Trench IGBT

Datasheet: FGL60N100BNTD-D.pdf
Rev. A (511kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
Features
 
  • High Speed Switching
  • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A
  • High Input Impedance
  • Built-in Fast Recovery Diode
Applications
  • Uninterruptible Power Supply
  • Other Industrial
Technical Documentation & Design Resources
Simulation Models (1) Package Drawings (1)
Data Sheets (1)  
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FGL60N100BNTD Lifetime
Pb-free
Halide free
FGL60N100BNTD TO-264-3 340CA NA Tube 375 $3.9999
FGL60N100BNTDTU Active, Not Rec
Pb-free
Halide free
FGL60N100BNTD TO-264-3 340CA NA Tube 375 $2.7621
Market Leadtime (weeks) : Contact Factory
Market Leadtime (weeks) : Contact Factory
Case Outlines
340CA   
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