feedback
Rate this webpage
Need
Support?

NCP51810: High Performance, 150 V Half Bridge Gate Driver for GaN Power Switches

Datasheet: High Speed Half-Bridge Driver for GaN Power Switches
Rev. 1 (692kB)
Product Overview
»View Material Composition
» Product Change Notification
The NCP51810 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode) GaN HEMT power switches in offline, half-bridge power topologies. The NCP51810 offers short and matched propagation delays as well as −3.5 V to +150 V (typical) common-mode voltage range for the high−side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51810 offers important protection functions such as independent under−voltage lockout (UVLO) and IC thermal shutdown.
Features   Benefits
     
  • 150 V, high side and low side gate driver
 
  • Support 48 V input design with sufficient safety margin
  • Fast propagation delay of 50 ns max
 
  • Suitable for high frequency operation
  • Fast propagation delay of 50 ns max
 
  • Increased efficiency and allow paralleling
  • 200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry
 
  • Robust design for high switching frequency application
  • Separate source and sink output pin
 
  • Allow control of rise and fall time for EMI tuning
  • Regulated 5.2 V gate driver with independent UVLO for high side and low side output stages
 
  • Optimum driving of GaN power switches and simplify design
  • QFN 4 mm x 4 mm 15 pin packaging and optimized pin out
 
  • Small PCB foot print, reduced parasitic, suitable for high frequency operation
Applications   End Products
  • Resonant converters
  • Half bridge and full bridge converters
  • Active clamp flyback converters
  • Non isolated step down converters
 
  • Data center 48 V to low voltage intermediate bus converter
  • 48 V to PoL converter
  • Industrial power module
Evaluation/Development Tool Information
Product Status Compliance Short Description Action
NCP51810GAN1GEVB Active
Pb-free
100V eGaN Half Bridge Gate Driver Evaluation Board
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NCP51810AMNTWG Active
Pb-free
Halide free
NCP51810, 150 V Half Bridge Gate Driver for GaN Power Switches QFN-15 485FN 1 260 Tape and Reel 4000 $0.9333
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Rise Time (ns)
Fall Time (ns)
Drive Source Current Typ (A)
Drive Sink Current Typ (A)
Turn On Prop. Delay Typ (ns)
Turn Off Prop. Delay Typ (ns)
Delay Matching
Package Type
NCP51810AMNTWG  
 $0.9333 
Pb
H
 Active   
GaN
2
Half-Bridge
Junction Isolation
150
20
2
1.5
1
2
25
25
10
QFN-15
Case Outlines
485FN   
Previously Viewed Products
Clear List

Featured Video
150V Half Bridge Gate Driver
Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.