MTB2P50E: Power MOSFET -500V -2A 6 Ohm Single P-Channel D2PAK

Datasheet: Power MOSFET 2 A, 500 V, P-Channel D2PAK
Rev. 4 (85.0kB)
Product Overview
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Product Change Notification
P-Channel Enhancement-Mode Silicon Gate

The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Features
 
  • Robust High Voltage Termination
  • Avalanche Energy Specified
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Short Heatsink Tab Manufactured Not Sheared
  • Specially Designed Leadframe for Maximum Power Dissipation
  • Pb-Free Package is Available
Technical Documentation & Design Resources
Data Sheets (1) Package Drawings (1)
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
MTB2P50ET4G Obsolete
Pb-free
Halide free
MTB2P50E D2PAK-3 / TO-263-2 418B-04 1 260 Tape and Reel 800  
Market Leadtime (weeks) : Contact Factory
Case Outlines
418B-04   
Packages
MTB2P50E: Power MOSFET -500V -2A 6 Ohm Single P-Channel D2PAK
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