IRLM120A: N-Channel A-FET 200V, 1.13A, 800mΩ

Datasheet: IRLM120A-D.pdf
Rev. A (348kB)
Product Overview
View Reliability Data
View Material Composition
Product Change Notification
IRLM120A
Features
 
  • Avalanche Rugged Technology
  • Rugged Gate Oxide Technology ν Lower Input Capacitance
  • Improved Gate Charge
  • Extended Safe Operating Area
  • Lower Leakage Current : 10 μA (Max.) @ VDS = 200V
  • Lower RDS(ON) : 0.609 Ω (Typ.)
Technical Documentation & Design Resources
Application Notes (12) Package Drawings (1)
Data Sheets (1)  
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
IRLM120ATF Active, Not Rec
Pb-free
IRLM120A SOT-223-4 / TO-261-4 318H-01 1 250 Tape and Reel 4000 $0.2753
Market Leadtime (weeks) : 2 to 4
ON Semiconductor   (2020-09-02 00:00) : 8,000
Case Outlines
318H-01   
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