FQP13N06L: Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 13.6 A, 110 mΩ, TO-220

Datasheet: FQP13N06L-D.pdf
Rev. A (570kB)
Product Overview
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This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications..
Features
 
  • 13.6A, 60V, RDS(on) = 110mΩ(Max.) @VGS = 10 V, ID = 6.8A
  • Low gate charge ( Typ. 4.8nC)
  • Low Crss ( Typ. 17pF)
  • 100% avalanche tested
  • 175°C maximum junction temperature rating
Applications
  • Other Industrial
Product
Status
Compliance
Description
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Type
Qty.
FQP13N06L Lifetime
Pb-free
Halide free
FQP13N06L TO-220-3 340AT NA Tube 1000 $0.4064
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19) : >1K
Case Outlines
340AT   
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