Power MOSFET, N-Channel, QFET®, 600 V, 0.3 A, 11.5 Ω, TO-92

Favorite

Overview

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

  • Lighting
  • 0.3A, 600V, RDS(on) = 11.5Ω(Max.) @VGS = 10 V, ID = 0.15A
  • Low gate charge ( Typ. 4.8nC)
  • Low Crss ( Typ. 3.5pF)
  • 100% avalanche tested

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQN1N60CTA

Loading...

Last Shipments

CAD Model

Pb

A

H

P

TO−92 3LD 4.75x4.80

NA

0

FNFLD

2000

N

600

11500

N-Channel

Single

±30

4

0.3

1

-

-

4

4.8

130

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :