FQD20N06: Power MOSFET, N-Channel, QFET®, 60 V, 16.8 A, 63 mΩ, DPAK

Datasheet: FQD20N06-D.pdf
Rev. A (1419kB)
Product Overview
View Reliability Data
View Material Composition
Product Change Notification
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications..
Features
 
  • 16.8A, 60V, RDS(on) = 63mΩ(Max.) @VGS = 10 V, ID = 8.4A
  • Low gate charge ( Typ. 11.5nC)
  • Low Crss ( Typ. 25pF)
  • 100% avalanche tested
Applications
  • Lighting
  • Other Industrial
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FQD20N06TM Lifetime
Pb-free
FQD20N06 DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 $0.2939
Market Leadtime (weeks) : Contact Factory
Case Outlines
369AS   
Previously Viewed Products
Clear List

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.