FQD10N20C: Power MOSFET, N-Channel, QFET®, 200 V, 10 A, 360 mΩ, DPAK

Datasheet: FQU10N20C-D.pdf
Rev. A (654kB)
Product Overview
View Reliability Data
View Material Composition
Product Change Notification
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
 
  • 7.8A, 200V, RDS(on) = 360mΩ(Max.) @VGS = 10 V, ID = 3.9A
  • Low gate charge ( Typ. 20nC)
  • Low Crss ( Typ. 40.5pF)
  • 100% avalanche tested
Applications
  • LED TV
  • CRT/RPTV
  • Other Industrial
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FQD10N20CTM Active
Pb-free
FQD10N20C DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 $0.2669
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FQD10N20CTM  
 $0.2669 
Pb
 Active   
N-Channel
Single
200
±30
4
7.8
50
-
-
360
-
20
395
DPAK-3 / TO-252-3
Case Outlines
369AS   
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