FQB5N50C: Power MOSFET, N-Channel, QFET®, 500 V, 5 A, 1.4 Ω, D2PAK

Datasheet: FQB5N50C-D.pdf
Rev. A (589kB)
Product Overview
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Product Change Notification
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
 
  • 5A, 500V, RDS(on) = 1.4Ω(Max.) @VGS = 10 V, ID = 2.5A
  • Low gate charge ( Typ. 18nC)
  • Low Crss ( Typ. 15pF)
  • 100% avalanche tested
  • RoHS compliant
Applications
  • Lighting
Technical Documentation & Design Resources
Application Notes (12) Package Drawings (1)
Data Sheets (1)  
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FQB5N50CTM Lifetime
Pb-free
Halide free
FQB5N50C D2PAK-3 / TO-263-2 418AJ 1 245 Tape and Reel 800 $0.7021
Market Leadtime (weeks) : Contact Factory
Case Outlines
418AJ   
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