FQA90N08: Power MOSFET, N-Channel, QFET®, 80 V, 90 A, 16 mΩ, TO-3P

Datasheet: FQA90N08-D.pdf
Rev. A (2442kB)
Product Overview
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Product Change Notification
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
 
  • 90A, 80V, RDS(on) = 16mΩ(Max.) @VGS = 10 V, ID = 45A
  • Low gate charge ( Typ. 84nC)
  • Low Crss ( Typ. 200pF)
  • 100% avalanche tested
  • 175°C maximum junction temperature rating
Applications
  • Energy Generation & Distribution
Technical Documentation & Design Resources
Application Notes (12) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FQA90N08 Active
Pb-free
FQA90N08 TO-3P-3L 340BZ NA Tube 450 $1.5764
Market Leadtime (weeks) : 2 to 4
ON Semiconductor   (2020-09-02 00:00) : 4,500

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FQA90N08  
 $1.5764 
Pb
 Active   
N-Channel
Single
80
±25
4
90
214
-
-
16
-
84
2500
TO-3P-3L
Case Outlines
340BZ   
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