FDU5N60NZTU

Power MOSFET, N-Channel, UniFETTM II, 600 V, 4 A, 2 Ω, IPAK

Overview

UniFET II MOSFET is ON Semiconductor’s high voltageMOSFET family based on advanced planar stripe and DMOStechnology. This advanced MOSFET family has the smallest on−stateresistance among the planar MOSFET, and also provides superiorswitching performance and higher avalanche energy strength. Inaddition, internal gate−source ESD diode allows UniFET II MOSFETto withstand over 2 kV HBM surge stress. This device family issuitable for switching power converter applications such as powerfactor correction (PFC), flat panel display (FPD) TV power, ATX andelectronic lamp ballasts.

Applications

LCD / LED TV
Lighting
Charger / Adapter

Features

RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2 A
Low Gate Charge (Typ. 10 nC)
Low Crss (Typ. 5 pF)
100% Avalanche Tested
Improved dv/dt Capability
ESD Improved Capability
These Devices are Pb−Free and are RoHS Compliant

Material Composition

Product Change Notification

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDU5N60NZTU

Obsolete

IPAK-3 / DPAK-3 STRAIGHT LEAD

369AR

TUBE

5040

600

2000

N-Channel

Single

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDU5N60NZTU

Power MOSFET, N-Channel, UniFETTM II, 600 V, 4 A, 2 Ω, IPAK

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