Dual N-Channel PowerTrench® SyncFET™, 30V, 7.5A, 22mΩ

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Overview

The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky diodes using a monolithic SyncFET technology. The performance of the FDS6990AS as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode.

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Motor Drives
  • 7.5A, 30V
    RDS(ON) = 22 mΩ @ VGS = 10V
    RDS(ON) = 28 mΩ @ VGS = 4.5V
  • Includes SyncFET Schottky body diode
  • Low gate charge (10nC typical)
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS6990AS

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

30

Q1=Q2=22

N-Channel

Dual

20

3

7.5

2

-

Q1=Q2=28

-

6

550

Price N/A

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