MOSFETs | FDS2672_F085

N-Channel UltraFET® Trench 200V, 3.9A, 70mΩ

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Overview

This single N-Channel MOSFET is produced using an advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

  • Infotainment
  • Portable Navigation
  • Infotainment
  • Other
  • Power Train
  • Safety and Control
  • Comfort and Convenience
  • Body Electronics
  • Vehicle Security Systems
  • Other Automotive
  • DC-DC Conversion
  • Max. rDS(on) = 70mΩat VGS = 10V, ID = 3.9A
  • Max. rDS(on) = 80mΩat VGS = 6V, ID = 3.5A
  • Fast switching speed
  • High performance trench technology for extremely low rDS(on)
  • Qualified to AEC Q101
  • RoHS compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDS2672-F085

Last Shipments

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

N-Channel

Single

200

±20

4

3.9

2.5

-

-

70

-

33

1905

Price N/A

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