Power MOSFET, N-Channel, UniFETTM II, 600 V, 3.8 A, 2.5 Ω, TO-220F

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Overview

UniFETTM II MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

  • This product is general usage and suitable for many different applications.
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supplies
  • AC-DC Power Supplies
  • RDS(on) = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A
  • Low gate charge ( Typ. 8.3nC)
  • Low Crss ( Typ. 3.7pF)
  • 100% avalanche tested
  • Improved dv/dt capability
  • ESD improved capability
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDPF4N60NZ

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

N

600

2500

N-Channel

Single

±25

5

3.8

28

-

-

-

8.3

385

Price N/A

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