MOSFETs | FDMS7672AS

N-Channel PowerTrench® SyncFET™ 30V, 42A, 4mΩ

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Overview

The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A
  • Max rDS(on) = 4.5 mΩ at VGS = 7 V, ID = 16 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • SyncFET Schottky Body Diode
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

Material Composition

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

FDMS7672AS

Last Shipments

CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

N

N-Channel

Single

30

20

3

42

46

-

5.2

4

14

15

2120

Price N/A

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