MOSFETs | FDMD85100

Dual N-Channel PowerTrench® MOSFET 100V 48A, 9.9mΩ

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Overview

This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

  • This product is general usage and suitable for many different applications.
  • Q1: N-Channel
    Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A
    Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A
  • Q2: N-Channel
    Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A
    Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A
  • Ideal for flexible layout in primary side of bridge topology
  • Termination is Lead-free and RoHS Compliant
  • 100% UIL tested
  • Kelvin High Side MOSFET drive pin-out capability

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMD85100

Last Shipments

Pb

A

H

P

PQFN-8

483AT

1

260

REEL

3000

N

N-Channel

Dual

100

±20

4

Q1=Q2: 48.0

50

-

-

Q1=Q2=9.9

9.2

13.5

Q1=1590, Q2:1485

Price N/A

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