Dual N-Channel Power Trench® MOSFET 40V, 12A, 10mΩ

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Overview

This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.

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  • Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A
  • Max rDS(on) = 14 mΩ at VGS = 4.5 V, ID = 10 A
  • Max rDS(on) = 28 mΩ at VGS = 3.2 V, ID = 4 A
  • Termination is Lead-free and RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMC8030

Active

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

N-Channel

Dual

20

±20

2.8

12

14

-

Q1=Q2=14

Q1=Q2=10

-

12

1462

$0.4721

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