P-Channel PowerTrench® MOSFET -60V, -13.5A, 100mΩ

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Overview

This P-Channel MOSFET is a rugged gate version of an advanced Power Trench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V).

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 100 mΩ @ VGS = -10 V,ID = -5.7A
  • Max rDS(on) = 135 mΩ @ VGS = -4.5 V,ID = -4.4A
  • Low gate charge
  • Fast switching speed
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • RoHS Compliant

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CAD Models

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MSL Type

MSL Temp (°C)

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Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMC5614P

Last Shipments

Pb

A

H

P

WDFN-8

1

260

REEL

3000

N

P-Channel

Single

-60

±20

-3

-13.5

42

-

135

100

37

15

795

Price N/A

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