P‐Channel Power Trench® MOSFET, -20V, -75A, 4.9mΩ

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Overview

This P−Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.

  • Load Switch
  • Battery Management
  • Power Management
  • Reverse Polarity Protection
  • Max rDS(on) = 4.9 m at VGS = −4.5 V, ID = −18 A
  • Max rDS(on) = 16.4 m at VGS = −1.8 V, ID = −9 A
  • High Performance Trench Technology for Extremely Low rDS(on)
  • High Power and Current Handling Capability in a Widely UsedSurface Mount Package
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant

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Status

CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMC4D9P20X8

Lifetime

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

P-Channel

Single

-20

±12

-1.6

-75

40

6.5

4.9

-

78

-

7535

$0.4625

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