N-Channel UltraFET Power MOSFET 55V, 15A, 90mΩ

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Overview

These N-Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.

  • AC-DC Merchant Power Supply - Servers & Workstations
  • Workstation
  • Server & Mainframe
  • RDS(on) = 75 mΩ (Typ.)@ VGS = 10 V, ID = 15 A
  • 100% Avalanche Tested
  • RoHS compliant

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MSL Temp (°C)

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Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMC15N06

Active

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

N-Channel

Single

55

±20

4

15

35

-

-

90

18

8.8

265

$0.6258

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