MOSFETs | FDMB2307NZ

Dual Common Drain N-Channel PowerTrench® MOSFET 20V , 9.7A, 16.5mΩ

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Overview

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on ON Semiconductor’s advanced PowerTrench® process with state of the art MicroFET Leadframe, the FDMB2307NZ minimizes both PCB space and rS1S2(on).

  • Mobile Handsets
  • Max rS1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A
  • Max rS1S2(on) = 18 mΩat VGS = 4.2 V, ID = 7.4 A
  • Max rS1S2(on) = 21 mΩ at VGS = 3.1 V, ID = 7 A
  • Max rS1S2(on) = 24 mΩ at VGS = 2.5 V, ID = 6.7 A
  • Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm
  • HBM ESD protection level> 2 kV (Note 3)
  • RoHS Compliant

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Package Type

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MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMB2307NZ

Active

Pb

A

H

P

WDFN-6

511CX

1

260

REEL

3000

Y

N-Channel

Dual

20

12

1.5

9.7

2.2

Q1=Q2=24

Q1=Q2=16.5

-

4

18

1760

$0.31

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