Single N-Channel Power Trench® MOSFET 30V, 9.0A, 16mΩ

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Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance.

  • Notebook PC
  • Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 9.0 A
  • Max rDS(on) = 19 mΩ at VGS = 4.5 V, ID = 8.5 A
  • High performance trench technology for extremely low rDS(on)
  • Fast switching speed
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMA8878

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Active

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

N

30

16

N-Channel

Single

20

3

9

2.4

-

19

-

4.1

539

$0.5503

More Details

FDMA8878-F130

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Active

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

N

30

16

N-Channel

Single

20

3

9

2.4

-

19

-

4.1

539

$0.1293

More Details

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