MOSFETs | FDMA410NZT

Ultra Thin N-Channel 1.5 V PowerTrench® MOSFET 20V, 9.5A, 23mΩ

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Overview

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.
This design is similar to the FDMA410NZ, however it features our new advanced 0.55mm max 2x2 MLP package technology.

  • This product is general usage and suitable for many different applications.
  • Consumer and Industrial
  • 0.55mm max package height MicroFET 2x2mm Package
  • Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A
  • Pb Free and Free from halogenated compounds and antimony oxides
  • Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A
  • Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A
  • Max rDS(on) = 50 m: at VGS = 1.5 V, ID = 2.0 A
  • HBM ESD protection level >2.5 kV ( Note 3)

Material Composition

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMA410NZT

Active

Pb

A

H

P

UDFN-6

1

260

REEL

3000

Y

N-Channel

Single

20

8

1

9.5

2.4

29

23

-

7.3

10

935

$0.2639

More Details

FDMA410NZT-F130

Active

Pb

A

H

P

UDFN-6

1

260

REEL

3000

F

N-Channel

Single

20

8

1

9.5

2.4

29

23

-

7.3

10

935

$0.2639

More Details

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