Complementary PowerTrench® MOSFET 30V/-25V

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Overview

These N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

  • This product is general usage and suitable for many different applications.
  • Q1: N-Channel
    Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
    Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
  • Q2: P-Channel
    Max rDS(on) = 1.1Ω at VGS = -4.5V, ID = -0.41A
    Max rDS(on) = 1.5Ω at VGS = -2.7V, ID = -0.25A
  • Very low level gate drive requirements allowing directoperation in 3V circuits(VGS(th) <1.5V)
  • Very small package outline SC70-6
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDG8842CZ

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Lifetime

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

1

260

REEL

3000

N

±25

-

Complementary

Dual

-8

±1.5

N:0.75, P: -0.41

0.36

N:500, P:1500

N: 400, P: 1100

1.2

1.2

70

$0.1767

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