FDG6308P: Dual P-Channel 1.8V Specified PowerTrench® MOSFET -20 V, -0.6 A, 400 mΩ

Datasheet: FDG6308P-D.pdf
Rev. A (182kB)
Product Overview
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Product Change Notification
This P-Channel 1.8V specified MOSFET uses an advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
 
  • –0.6 A, –20 V.
  • RDS(ON)= 0.40Ω @ VGS = –4.5 V
  • RDS(ON) = 0.55Ω @ VGS = –2.5 V
  • RDS(ON) = 0.80Ω @ VGS = –1.8 V
  • Low gate charge
  • High performance trench technology for extremelylow RDS(ON)
  • Compact industry standard SC70-6 surface mountpackage
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDG6308P Active
Pb-free
Halide free
FDG6308P SC-88-6 / SC-70-6 / SOT-363-6 419B-02 1 260 Tape and Reel 3000 $0.1455
Market Leadtime (weeks) : 13 to 16

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDG6308P  
 $0.1455 
Pb
H
 Active   
P-Channel
Dual
-20
8
-1.5
-0.6
0.3
Q1=Q2=550
Q1=Q2=400
-
0.76
1.8
153
SC-88-6 / SC-70-6 / SOT-363-6
Case Outlines
419B-02   
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