MOSFETs | FDFS2P106A

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode, -60V, -3.0 A, 110 mΩ

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Overview

The FDFS2P106A combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

  • This product is general usage and suitable for many different applications.
  • -3.0A, -60 V
  • RDS(on) = 110 mΩ@ VGS = -10 V
  • RDS(on) = 140 mΩ @ VGS = -4.5 V
  • VF < 0.53 V @ 1 A
  • VF < 0.45 V @ 1 A (TJ = 125°C)
  • VF < 0.62 V @ 2 A
  • Schottky and MOSFET incorporated into singlepower surface mount SO-8 package
  • Electrically independent Schottky and MOSFETpinout for design flexibility

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MSL Type

MSL Temp (°C)

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Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDFS2P106A

Lifetime

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

P-Channel

with Schottky Diode

-60

±20

-3

-3

2

-

140

110

-

15

714

$0.6447

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